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Threshold voltage and on-current Variability related to interface traps spatial distribution., , , , , , , , and . ESSDERC, page 230-233. IEEE, (2015)Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells., , , , , , , and . SMACD, page 1-4. IEEE, (2017)Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization., , , , and . DCIS, page 1-4. IEEE, (2018)Reliability simulation for analog ICs: Goals, solutions, and challenges., , , , , , , and . Integr., (2016)Effect of oxide breakdown on RS latches., , , and . Microelectron. Reliab., 47 (4-5): 581-584 (2007)Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale., , , and . Microelectron. Reliab., 45 (9-11): 1390-1393 (2005)Unified characterization of RTN and BTI for circuit performance and variability simulation., , , , and . ESSDERC, page 266-269. IEEE, (2012)Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 2110-2114 (2012)CMOS Characterization and Compact Modelling for Circuit Reliability Simulation., , , , , , and . IOLTS, page 139-142. IEEE, (2018)A size-adaptive time-step algorithm for accurate simulation of aging in analog ICs., , , , , , , and . ISCAS, page 1-4. IEEE, (2017)