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Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS., , и . DTIS, стр. 1-6. IEEE, (2017)Reliability issues and length dependence of nanocrystalline graphene field-effect transistors for gas sensing., и . DTIS, стр. 1-5. IEEE, (2019)Nanoelectronics: From silicon to graphene., , , , и . DTIS, стр. 1-3. IEEE, (2012)Simulation framework for barrier lowering in Schottky barrier MOSFETs., , , , , и . MIXDES, стр. 149-153. IEEE, (2017)The transport and optical sensing properties of Blue Phosphorene: A First-Principles Study., , , и . DTIS, стр. 1-4. IEEE, (2019)Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material., , и . IDT, стр. 1-6. IEEE, (2013)PMMA-enhancement of the lateral growth of transfer-free in situ CCVD grown graphene., и . SSD, стр. 548-551. IEEE, (2016)Feasibility study on in situ CCVD grown CNTs for field-effect power device applications., , , , , и . DTIS, стр. 1-3. IEEE, (2012)Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology., , и . Microelectron. Reliab., 47 (4-5): 528-531 (2007)Investigation of transfer-free catalytic CVD graphene on SiO2 by means of conductive atomic force microscopy., и . DTIS, стр. 1-4. IEEE, (2016)