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Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS.

, , and . DTIS, page 1-6. IEEE, (2017)

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Dopant-free CMOS: A new device concept., , and . DTIS, page 1-3. IEEE, (2012)An electrostatically doped planar device concept., , and . DTIS, page 1-4. IEEE, (2014)Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS., , and . DTIS, page 1-4. IEEE, (2018)Process and Device Simulation of Schottky Barrier MOSFETs for Analysis of Current Injection., , , , , and . MIXDES, page 67-72. IEEE, (2018)Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS., , and . SSD, page 681-686. IEEE, (2016)Simulation framework for barrier lowering in Schottky barrier MOSFETs., , , , , and . MIXDES, page 149-153. IEEE, (2017)Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material., , and . IDT, page 1-6. IEEE, (2013)Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS., , and . DTIS, page 1-6. IEEE, (2017)Towards Ambipolar Planar Devices: The DeFET Device in Area Constrained XOR Applications., , , , , , and . LASCAS, page 1-4. IEEE, (2020)From MOSFETs to Ambipolar Transistors: A Static DeFET Inverter Cell for SOI., , , , , , and . APCCAS, page 113-116. IEEE, (2019)