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Energy efficiency optimization for digital applications in 28nm UTBB FDSOI technology.

, , , , and . MIXDES, page 23. IEEE, (2015)

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Small-Sized Leakage-Controlled Gated Sense Amplifier for 0.5-V Multi-Gigabit DRAM Arrays., , , , and . IEICE Trans. Electron., 95-C (4): 594-599 (2012)Nanoscale Memory Repair, and . Integrated Circuits and Systems Springer, (2011)Low-voltage limitations of memory-rich nano-scale CMOS LSIs., , and . ESSCIRC, page 68-75. IEEE, (2007)0.5-V 25-nm 6-T Cell with Boosted Word Voltage for 1-Gb SRAMs., , and . IEICE Trans. Electron., 95-C (4): 555-563 (2012)Long-Retention-Time, High-Speed DRAM Array with 12-F2 Twin Cell for Sub 1-V Operation., , , , , , and . IEICE Trans. Electron., 90-C (4): 758-764 (2007)Low-Voltage Embedded-RAM Technology: Present and Future., and . VLSI-SOC, volume 218 of IFIP Conference Proceedings, page 277-288. Kluwer, (2001)Device-conscious circuit designs for 0.5-V high-speed memory-rich nanoscale CMOS LSIs., , , , and . CICC, page 1-7. IEEE, (2011)A multigigabit DRAM technology with 6F2 open-bitline cell, distributed overdriven sensing, and stacked-flash fuse., , , , , , , , , and 5 other author(s). IEEE J. Solid State Circuits, 36 (11): 1721-1727 (2001)Variability-Conscious Circuit Designs for Low-Voltage Memory-Rich Nano-Scale CMOS LSIs.. PATMOS, volume 6448 of Lecture Notes in Computer Science, page 255. Springer, (2010)Leakage- and variability-conscious circuit designs for the 0.5-v nanoscale CMOS era.. ISLPED, page 273-274. ACM, (2009)