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NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures., , , , , , , , , and . IRPS, page 2. IEEE, (2015)ESD protection diodes in optical interposer technology., , , , , , and . ICICDT, page 1-4. IEEE, (2015)Transient voltage overshoot in TLP testing - Real or artifact?, , , , , and . Microelectron. Reliab., 47 (7): 1016-1024 (2007)Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability., , , and . Microelectron. Reliab., 47 (4-5): 559-566 (2007)Physics-based device aging modelling framework for accurate circuit reliability assessment., , , , , , , , , and . IRPS, page 1-6. IEEE, (2021)Understanding the memory window in 1T-FeFET memories: a depolarization field perspective., , , , , , , and . IMW, page 1-4. IEEE, (2021)Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology., , , , , , , , , and . ISQED, page 473-479. IEEE, (2014)Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps., , , , , , and . IRPS, page 5. IEEE, (2018)The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation., , , , , and . IRPS, page 1-7. IEEE, (2020)Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications., , , , , , , , , and 6 other author(s). ICICDT, page 1-4. IEEE, (2012)