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Lifetime modeling of intrinsic gate oxide breakdown at high temperature., , , , , and . Microelectron. Reliab., 47 (9-11): 1389-1393 (2007)Influence of charge balance on the robustness of trench-based super junction diodes., , , , , , , and . Microelectron. Reliab., 52 (9-10): 2409-2413 (2012)Technology and design of GaN power devices., , , , , , , , , and 5 other author(s). ESSDERC, page 64-67. IEEE, (2015)Trapping induced parasitic effects in GaN-HEMT for power switching applications., , , , and . ICICDT, page 1-4. IEEE, (2015)Electric field unbalance for robust floating ring termination., , , , and . Microelectron. Reliab., 51 (9-11): 1959-1963 (2011)Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices., , , , , , , , and . Microelectron. Reliab., 50 (9-11): 1758-1762 (2010)Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors., , , , , , , , and . IRPS, page 2. IEEE, (2015)