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Disambiguation of "Meneghesso, Gaudenzio"

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Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.

, , , , , , , , , and . Microelectron. Reliab., (2017)

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Degradation of InGaN-based LEDs related to charge diffusion and build-up., , , , and . Microelectron. Reliab., (2016)DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues., , , , and . Microelectron. Reliab., 45 (9-11): 1585-1592 (2005)Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits., , , , , and . Microelectron. Reliab., 52 (9-10): 2093-2097 (2012)Degradation of GaN-on-GaN vertical diodes submitted to high current stress., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2018)Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs., , and . Microelectron. Reliab., 41 (9-10): 1579-1584 (2001)Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism., , , , , and . Microelectron. Reliab., 50 (9-11): 1599-1603 (2010)Effects of constant voltage stress on organic complementary logic inverters., , , , , , , and . ESSDERC, page 298-301. IEEE, (2014)Reliability Investigation of GaN HEMTs for MMICs Applications., , , , and . Micromachines, 5 (3): 570-582 (2014)Full Optical Contactless Thermometry Based on LED Photoluminescence., , , , , , , and . IEEE Trans. Instrum. Meas., (2021)Single- and double-heterostructure GaN-HEMTs devices for power switching applications., , , , , , , , , and . Microelectron. Reliab., 52 (9-10): 2426-2430 (2012)