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Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation., , , , , , , and . Microelectron. Reliab., (2017)Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process., , , , , , , and . IEICE Electron. Express, 16 (22): 20190516 (2019)Vertical stack reliability of GaN-on-Si buffers for low-voltage applications., , , , , , , , , and . IRPS, page 1-8. IEEE, (2021)Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis., , , , , , , , , and 3 other author(s). Microelectron. Reliab., (2016)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level., , , , , , , , , and . Microelectron. Reliab., (2017)Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition., , , , , , , and . IRPS, page 10. IEEE, (2022)