From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Design of a soft-error tolerant 9-transistor/6-magnetic-tunnel-junction hybrid cell based nonvolatile TCAM., , и . NEWCAS, стр. 193-196. IEEE, (2014)High-throughput CAM based on a synchronous overlapped search scheme., , , , и . IEICE Electron. Express, 10 (7): 20130148 (2013)Implementation of a Standby-Power-Free CAM Based on Complementary Ferroelectric-Capacitor Logic., , , , и . ASP-DAC, стр. 116-117. IEEE Computer Society, (2007)High-Throughput Low-Energy Content-Addressable Memory Based on Self-Timed Overlapped Search Mechanism., , , и . ASYNC, стр. 41-48. IEEE Computer Society, (2012)Quaternary 1T-2MTJ Cell Circuit for a High-Density and a High-Throughput Nonvolatile Bit-Serial CAM., и . ISMVL, стр. 98-103. IEEE Computer Society, (2012)MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues., , , , , , и . DATE, стр. 433-435. IEEE, (2009)A Compact Soft-Error Tolerant Asynchronous TCAM Based on a Transistor/Magnetic-Tunnel-Junction Hybrid Dual-Rail Word Structure., , и . ASYNC, стр. 1-8. IEEE Computer Society, (2014)A 3.14 um2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture., , , , , , , и . VLSIC, стр. 44-45. IEEE, (2012)High-Throughput Low-Energy Self-Timed CAM Based on Reordered Overlapped Search Mechanism., , , , и . IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (3): 865-876 (2014)Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme., , , , , , , и . IEICE Electron. Express, 11 (10): 20140297 (2014)