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13.9 A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAE.

, , , , , and . ISSCC, page 232-233. IEEE, (2017)

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Assessment of the impact of technology scaling on the performance of LC-VCOs., , , , , and . ESSCIRC, page 364-367. IEEE, (2009)Advances in Multi-Gate MOSFET Circuit Design., , , , , , , , , and 2 other author(s). ICECS, page 186-189. IEEE, (2007)Design of Low-Voltage Bandgap Reference Circuits in Multi-Gate CMOS Technologies., , , and . ISCAS, page 2537-2540. IEEE, (2009)A 28nm Low-Voltage Digital Power-Amplifier for QAM-256 WIFI Applications in 0.5mm2 Area w/ 2D Digital-Pre-Distortion and Package Combiner., , , , and . ICECS, page 21-24. IEEE, (2018)Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs., and . CICC, page 209-212. IEEE, (2002)13.9 A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAE., , , , , and . ISSCC, page 232-233. IEEE, (2017)Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs., , , and . NORCAS, page 1-4. IEEE, (2015)LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology., , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 58-II (8): 467-471 (2011)Dielectric absorption of low-k materials: extraction, modelling and influence on SAR ADCs., , , and . ISCAS, IEEE, (2006)SUB-45nm Technology and Design Challenges., , and . ISQED, page 3. IEEE Computer Society, (2007)