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Disambiguation of "Iizuka, Takahiro"

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Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions.

, , , , , , , , , , and . IEICE Trans. Electron., 96-C (10): 1339-1347 (2013)

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Takahiro Kato

Hajime Iizuka

Takahiro Moriyama

Takahiro Kirihara

Takahiro Nishiyama

 

Other publications of authors with the same name

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions., , , , , , , , , and 1 other author(s). IEICE Trans. Electron., 96-C (10): 1339-1347 (2013)Slowly progressive spread of the stroke-like lesions in MELAS, , , and . Neurology, 61 (9): 1238--1244 (2003)MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime., , , , , , , , , and . CICC, page 827-830. IEEE, (2005)Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors., , , , , , , , , and . IEICE Trans. Electron., 92-C (6): 777-784 (2009)Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation., , , , , , , and . IEEE Access, (2021)Validation on Duality in Impact-ionization Carrier Generation at the Onset of Snapback in Power MOSFETs., , , and . ISDCS, page 1-4. IEEE, (2019)History Effect on Circuit Performance of SOI-MOSFETs., , , , , and . ISDCS, page 1-5. IEEE, (2020)Modeling of Short-Channel Effect on Multi-Gate MOSFETs for Circuit Simulation., , , , , and . ISDCS, page 1-4. IEEE, (2020)History effect investigation in SOI MOSFET for minimizing impact on circuit performance., and . ISDCS, page 1-5. IEEE, (2021)Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations., , , , , , , , , and 2 other author(s). Math. Comput. Simul., 79 (4): 1096-1106 (2008)