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Single-ended sub-threshold finfet 7T SRAM cell without boosted supply., , и . ICICDT, стр. 1-4. IEEE, (2014)Voltage up level shifter with improved performance and reduced power., , и . CCECE, стр. 1-4. IEEE, (2012)Dataline Isolated Differential Current Feed/Mode Sense Amplifier for Small Icell SRAM Using FinFET., , , , и . ACM Great Lakes Symposium on VLSI, стр. 95-98. ACM, (2015)A 2.5 GHz, 1-Kb SRAM with Auxiliary Circuit Assisted Sense Amplifier in 65-nm CMOS Process., , , , и . VLSID, стр. 1-6. IEEE, (2023)A 20 nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell under process-voltage-temperature variations., , и . Microelectron. J., (2016)Design of Approximate Dividers for Error Tolerant Applications., , , и . MWSCAS, стр. 496-499. IEEE, (2018)A robust 8T FinFET SRAM cell with improved stability for low voltage applications., , , и . VDAT, стр. 1-6. IEEE, (2016)Nanoscale Memory Design for Efficient Computation: Trends, Challenges and Opportunity., , , , и . iNIS, стр. 29-34. IEEE, (2015)Design of Approximate Booth Squarer for Error-Tolerant Computing., , , и . IEEE Trans. Very Large Scale Integr. Syst., 28 (5): 1230-1241 (2020)ABB Assisted Area Efficient Vernier Delay Line Time-to-Digital Converter for Low Voltage Applications., , , , , , , , , и . APCCAS, стр. 100-104. IEEE, (2023)