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Disambiguation of "Bulusu, Anand"

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Two dimensional analytical modeling for asymmetric 3T and 4T double gate tunnel FET in sub-threshold region: Potential and electric field.

, , and . Microelectron. J., 44 (12): 1251-1259 (2013)

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Davinder Kumar Anand

Amar Frank Anand

Madhankumar Anandhakrishnan

Anand Raghavachar

Anand Roy

 

Other publications of authors with the same name

Impact of Dummy Poly on the Process-Induced Mechanical Stress Enhanced Circuit Performance., , and . VDAT, volume 7373 of Lecture Notes in Computer Science, page 357-359. Springer, (2012)An efficient method for ECSM characterization of CMOS inverter in nanometer range technologies., , , and . ISQED, page 665-669. IEEE, (2013)Phase Noise Analysis of Separately Driven Ring Oscillators., , , , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 69 (11): 4415-4428 (2022)A Variation Aware Jitter Estimation Methodology in ROs Considering Over/Undershoots in NTV Regime., , and . IEEE Trans. Circuits Syst. II Express Briefs, 69 (3): 1557-1561 (2022)Design and Realization of High-Speed Low-Noise Multi-Loop Skew-Based ROs Optimized for Even/Odd Multi-Phase Signals., , , , , and . IEEE Trans. Circuits Syst., 67-II (11): 2352-2356 (2020)Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on Multidomain MFIM Capacitor and Negative Capacitance FDSOI., , , , , , , , , and 1 other author(s). IRPS, page 23-1. IEEE, (2022)Investigation of Body Bias Impact in Si/SiGe Heterojunction Line TFETs: A Physical Insight., and . ISCAS, page 1-5. IEEE, (2023)Design optimization Using Symmetric/Asymmetric Spacer for 14 nm Multi-Fin Tri-gate Fin-FET for Mid-Band 5G Applications., , , , , , and . VLSID, page 292-296. IEEE, (2022)Tutorial T6: FinFET Device Circuit Co-design: Issues and Challenges., and . VLSID, page 12-13. IEEE Computer Society, (2015)A unified Verilog-A compact model for lateral Si nanowire (NW) FET incorporating parasitics for circuit simulation., , , , , and . VDAT, page 1-6. IEEE, (2016)