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Disambiguation of "Rampazzo, Fabiana"

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Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.

, , , , , , and . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)

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Nicola Rampazzo

Fabiana Cossavella

Fabiana Ziper

Fabiana Perocchi

Fabiana Ganz

 

Other publications of authors with the same name

Single- and double-heterostructure GaN-HEMTs devices for power switching applications., , , , , , , , , and . Microelectron. Reliab., 52 (9-10): 2426-2430 (2012)Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , and . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 47 (9-11): 1639-1642 (2007)Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 54 (9-10): 2248-2252 (2014)Hot carrier aging degradation phenomena in GaN based MESFETs., , , , , , , and . Microelectron. Reliab., 44 (9-11): 1375-1380 (2004)Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate., , , , , and . IEICE Electron. Express, 3 (13): 310-315 (2006)Thermally-activated failure mechanisms of 0.25 \ m$ RF AIGaN/GaN HEMTs submitted to long-term life tests., , , , , , , and . IRPS, page 1-5. IEEE, (2023)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs., , , , , , , , , and 4 other author(s). IRPS, page 1-2. IEEE, (2021)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs., , , , , , and . ESSDERC, page 389-392. IEEE, (2014)Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling., , , , , , , , , and 1 other author(s). IRPS, page 1-10. IEEE, (2020)