Author of the publication

Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.

, , , , , , and . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Trapping induced parasitic effects in GaN-HEMT for power switching applications., , , , and . ICICDT, page 1-4. IEEE, (2015)Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate., , , , , , , , , and . Microelectron. Reliab., 53 (9-11): 1476-1480 (2013)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , and . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)Traps localization and analysis in GaN HEMTs., , , , and . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)Optimization of ESD protection structures suitable for BCD6 smart power technology., , , , , and . Microelectron. Reliab., 43 (9-11): 1589-1594 (2003)Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics., , , and . Microelectron. Reliab., 53 (9-11): 1456-1460 (2013)Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 53 (9-11): 1444-1449 (2013)Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs., , , , , , and . Microelectron. Reliab., (2016)Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields., , , , , , , and . Microelectron. Reliab., 48 (8-9): 1370-1374 (2008)Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs., , , , , , , and . Microelectron. Reliab., 53 (9-11): 1461-1465 (2013)