Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.

Y. Cai, Y. Wang, Y. Liang, Y. Zhang, W. Liu, H. Wen, I. Mitrovic, and C. Zhao. IEEE Access, (2020)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Veselin Mitrovic

Nenad Mitrovic

Ivona Jakovljevi

Veselin Mitrovic

Sascha Mitrovic

Other publications of authors with the same name

Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors.T. Zhao, C. Zhao, I. Mitrovic, E. Lim, L. Yang, C. Qiu, and C. Zhao. IRPS, page 1-4. IEEE, (2020)Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.Y. Cai, Y. Wang, Y. Liang, Y. Zhang, W. Liu, H. Wen, I. Mitrovic, and C. Zhao. IEEE Access, (2020)Emerging Optical In-Memory Computing Sensor Synapses Based on Low-Dimensional Nanomaterials for Neuromorphic Networks.Z. Shen, C. Zhao, L. Kang, Y. Sun, Y. Liu, I. Mitrovic, L. Yang, E. Lim, Z. Zeng, and C. Zhao. Adv. Intell. Syst., (2022)Solution-processed Synaptic Transistors Utilizing MXenes as Floating Gate.T. Zhao, C. Zhao, Y. Liu, L. Yang, I. Mitrovic, E. Lim, and C. Zhao. ICICDT, page 1-4. IEEE, (2021)Electrical and structural properties of hafnium silicate thin films.I. Mitrovic, O. Buiu, S. Hall, C. Bungey, T. Wagner, W. Davey, and Y. Lu. Microelectron. Reliab., 47 (4-5): 645-648 (2007)Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices.Y. Cai, Y. Wang, M. Cui, W. Liu, H. Wen, C. Zhao, I. Mitrovic, S. Taylor, and P. Chalker. ICICDT, page 1-5. IEEE, (2019)Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors.Q. Liu, C. Zhao, C. Zhao, I. Mitrovic, S. Hall, W. Xu, L. Yang, E. Lim, Q. Wang, Y. Wei and 1 other author(s). ICICDT, page 1-5. IEEE, (2019)Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures.Z. Shen, C. Zhao, C. Zhao, I. Mitrovic, L. Yang, W. Xu, E. Lim, T. Luo, and Y. Huang. ICICDT, page 1-4. IEEE, (2019)Towards rectennas for solar energy harvesting.N. Sedghi, J. Zhang, J. Ralph, Y. Huang, I. Mitrovic, and S. Hall. ESSDERC, page 131-134. IEEE, (2013)Physical and electrical characterization of Mg-doped ZnO thin-film transistors.A. Shaw, T. Whittles, I. Mitrovic, J. Jin, J. Wrench, D. Hesp, V. Dhanak, P. Chalker, and S. Hall. ESSDERC, page 206-209. IEEE, (2015)

BibSonomy

Disambiguation of "Mitrovic, Ivona Z."

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.

Please choose a person to relate this publication to

Veselin Mitrovic

Nenad Mitrovic

Ivona Jakovljevi

Veselin Mitrovic

Sascha Mitrovic

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Mitrovic, Ivona Z."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.

Please choose a person to relate this publication to

Veselin Mitrovic

Nenad Mitrovic

Ivona Jakovljevi

Veselin Mitrovic

Sascha Mitrovic

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.