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A 2kV ESD-Protected 18GHz LNA with 4dB NF in 0.13μm CMOS., , и . ISSCC, стр. 194-195. IEEE, (2008)From Silicon Aether and Back., , и . ISSCC, стр. 152-153. IEEE, (2008)Physical scaling of integrated inductor layout and model and its application to WLAN VCO design at 11GHz and 17GHz.. ISCAS (1), стр. 637-640. IEEE, (2003)Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices., , , , , , , и . IEEE Trans. Circuits Syst. I Regul. Pap., 56-I (5): 920-932 (2009)Design of Low-Noise K-Band SiGe Bipolar VCOs: Theory and Implementation., , , , и . IEEE Trans. Circuits Syst. I Regul. Pap., 62-I (2): 607-615 (2015)Session 20 overview: Frequency generation., и . ISSCC, стр. 344-345. IEEE, (2013)Low-power low-phase-noise differentially tuned quadrature VCO design in standard CMOS.. IEEE J. Solid State Circuits, 36 (7): 1018-1024 (2001)A 21GHz 20.5%-tuning range Colpitts VCO with -119 dBc/Hz phase noise at 1MHz offset., , , , , и . ESSCIRC, стр. 91-94. IEEE, (2017)A 0.06 mm 2 11 mW Local Oscillator for the GSM Standard in 65 nm CMOS., , , , , и . IEEE J. Solid State Circuits, 45 (7): 1295-1304 (2010)A 17 GHz All-npn Push-Pull Class-C VCO., , , и . BCICTS, стр. 1-4. IEEE, (2019)