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On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors., , , , , , , , и . IRPS, стр. 11. IEEE, (2022)Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery., , , , , , , , , и 7 other автор(ы). IRPS, стр. 1-6. IEEE, (2022)Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-7. IEEE, (2019)Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors., , , , , , , , , и 2 other автор(ы). IRPS, стр. 10. IEEE, (2022)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , и . IRPS, стр. 6. IEEE, (2022)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 262-265. IEEE, (2019)Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets., , , , , , , , , и 1 other автор(ы). IRPS, стр. 5. IEEE, (2022)Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2020)Origins and implications of increased channel hot carrier variability in nFinFETs., , , , , , , , , и 11 other автор(ы). IRPS, стр. 3. IEEE, (2015)Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs., , , , , , , , , и . IRPS, стр. 1-7. IEEE, (2019)