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0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications., , , , , , , , , and 11 other author(s). IEEE J. Solid State Circuits, 44 (9): 2312-2321 (2009)Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications., , , , , , and . Microelectron. Reliab., 54 (9-10): 2171-2175 (2014)Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA., , , , , , , , and . CoRR, (2020)Design of zero bias power detectors towards power consumption optimization in 5G devices., , , , , , , and . Microelectron. J., (2021)Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies., , , , , , , and . ICM, page 1-4. IEEE, (2017)30 dBm P1dB and 4 dB insertion losses optimized 4G antenna tuner fully integrated in a 130 nm CMOS SOI technology., , , , , , , and . RWS, page 73-75. IEEE, (2013)Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses., , , , , , , and . IEEE J. Solid State Circuits, 47 (5): 1075-1083 (2012)Codesign of a PA-Antenna Block in Silicon Technology for 80-GHz Radar Application., , , , , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 60-II (4): 177-181 (2013)A 90GHz-carrier 30GHz-bandwidth hybrid switching transmitter with integrated antenna., , , , , , , , , and . ISSCC, page 420-421. IEEE, (2010)1-20 Ghz kΩ-range BiCMOS 55 nm reflectometer., , , , , , , and . NEWCAS, page 385-388. IEEE, (2014)