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New Access to Soft Breakdown Parameters of Low-k Dielectrics Through Localisation-Based Analysis., , , , , , , , , and 1 other author(s). IRPS, page 1-9. IEEE, (2019)Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling., , , , , , , , , and 1 other author(s). IRPS, page 1-10. IEEE, (2020)Thermal source separation for 3D defect localization using independent component analysis (ICA) from time-resolved temperature response (TRTR)., , , , , and . CASE, page 395-400. IEEE, (2021)Reliability evaluation of Si-dies due to assembly issues., , , and . Microelectron. Reliab., (2016)Lock-in thermal IR imaging using a solid immersion lens., , , , and . Microelectron. Reliab., 46 (9-11): 1508-1513 (2006)High resolution physical analysis of ohmic contact formation at GaN-HEMT devices., , , , , , , , , and . Microelectron. Reliab., (2017)Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures., , , and . Microelectron. Reliab., 54 (9-10): 1785-1789 (2014)Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy., , , , , and . Microelectron. Reliab., (2016)Modulation to the Rescue: Identifying Sub-Circuitry in the Transistor Morass for Targeted Analysis., , , , and . ASHES@CCS, page 113-122. ACM, (2023)Nano Security: From Nano-Electronics to Secure Systems., , , , , , , , , and 13 other author(s). DATE, page 1334-1339. IEEE, (2021)