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Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability., , , и . Microelectron. Reliab., 47 (4-5): 559-566 (2007)Transient voltage overshoot in TLP testing - Real or artifact?, , , , , и . Microelectron. Reliab., 47 (7): 1016-1024 (2007)NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures., , , , , , , , , и . IRPS, стр. 2. IEEE, (2015)ESD protection diodes in optical interposer technology., , , , , , и . ICICDT, стр. 1-4. IEEE, (2015)Physics-based device aging modelling framework for accurate circuit reliability assessment., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)Understanding the memory window in 1T-FeFET memories: a depolarization field perspective., , , , , , , и . IMW, стр. 1-4. IEEE, (2021)Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology., , , , , , , , , и . ISQED, стр. 473-479. IEEE, (2014)The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation., , , , , и . IRPS, стр. 1-7. IEEE, (2020)Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps., , , , , , и . IRPS, стр. 5. IEEE, (2018)Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications., , , , , , , , , и 6 other автор(ы). ICICDT, стр. 1-4. IEEE, (2012)