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Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology.

, , , , , , , , , and . Microelectron. Reliab., 52 (9-10): 2035-2038 (2012)

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Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology., , , , , , , , , and . Microelectron. Reliab., 52 (9-10): 2035-2038 (2012)Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell., , , , and . Microelectron. Reliab., 53 (9-11): 1300-1305 (2013)Fault Model Analysis of Laser-Induced Faults in SRAM Memory Cells., , , and . FDTC, page 89-98. IEEE Computer Society, (2013)Influence of triple-well technology on laser fault injection and laser sensor efficiency., , , , , , and . DFTS, page 85-90. IEEE Computer Society, (2015)Experimental validation of a Bulk Built-In Current Sensor for detecting laser-induced currents., , , , , and . IOLTS, page 150-155. IEEE, (2015)Laser-induced fault effects in security-dedicated circuits., , , , , , , , , and 9 other author(s). VLSI-SoC, page 1-6. IEEE, (2014)Checking Robustness Against EM Side-Channel Attacks Prior to Manufacturing., , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 41 (5): 1264-1275 (2022)Protecting Secure ICs Against Side-Channel Attacks by Identifying and Quantifying Potential EM and Leakage Hotspots at Simulation Stage., , , and . COSADE, volume 12910 of Lecture Notes in Computer Science, page 129-147. Springer, (2021)Electrical model of an NMOS body biased structure in triple-well technology under photoelectric laser stimulation., , , , , , and . IRPS, page 1. IEEE, (2015)Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS., , , , , , and . Microelectron. Reliab., 54 (9-10): 2289-2294 (2014)