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A new test methodology for an exhaustive study of single-event-effects on power MOSFETs., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 51 (9-11): 1995-1998 (2011)Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions., , , , , and . Microelectron. Reliab., 49 (9-11): 1033-1037 (2009)Experimental study of power MOSFET's gate damage in radiation environment., , , , , and . Microelectron. Reliab., 46 (9-11): 1854-1857 (2006)Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique., and . Microelectron. Reliab., 47 (4-5): 810-814 (2007)Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment., , , , , , , , and . Microelectron. Reliab., 43 (9-11): 1847-1851 (2003)Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure., , , , , and . Microelectron. Reliab., 48 (8-9): 1306-1309 (2008)Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS., and . Microelectron. Reliab., 45 (5-6): 994-999 (2005)The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure., , , , , , , and . Microelectron. Reliab., 44 (9-11): 1407-1411 (2004)Total ionizing dose reliability of thin SiO2 in PowerMOSFET devices., , and . Microelectron. Reliab., 47 (4-5): 815-818 (2007)Interface states and traps in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices., , , , and . Microelectron. Reliab., 47 (4-5): 819-821 (2007)