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The improvement of HEIP immunity using STI engineering at DRAM., , , , , , , , , and . Microelectron. Reliab., (2017)5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology., , , , , , , , , and 18 other author(s). ISSCC, page 102-104. IEEE, (2020)2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory., , , , , , , , , and 15 other author(s). IEEE J. Solid State Circuits, 57 (4): 1125-1137 (2022)Heterogeneous Integration of O-band LDs on bulk-Si Platform., , , , , , and . OECC/PSC, page 1-3. IEEE, (2019)5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology., , , , , , , , , and 12 other author(s). ISSCC, page 104-106. IEEE, (2020)A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory., , , , , , , , , and 15 other author(s). VLSI Circuits, page 1-2. IEEE, (2021)