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Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers., , , , , , , and . IEICE Trans. Electron., 100-C (5): 417-423 (2017)A 43-Gb/s full-rate-clock 4: 1 multiplexer in InP-based HEMT technology., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 37 (12): 1703-1709 (2002)High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors., , , , , , and . IEICE Trans. Electron., 106 (11): 661-668 (November 2023)A 50-Gbit/s 450-mW Full-Rate 4: 1 Multiplexer With Multiphase Clock Architecture in 0.13-µm InP HEMT Technology., , , , , , and . IEEE J. Solid State Circuits, 42 (3): 637-646 (2007)Temperature-Tolerant Crosstalk-Free WDM Demultiplexing Using Controller-Integrated Cascaded AMZ Triplet (CAT) on Si Nano-Waveguide PIC Platform., , , , , , and . ECOC, page 1-4. IEEE, (2021)300-GHz Amplifier in 75-nm InP HEMT Technology., , , , , , , , , and . IEICE Trans. Electron., 99-C (5): 528-534 (2016)Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis., , , , , , , , and . IEICE Trans. Electron., 98-C (12): 1112-1119 (2015)Foreword.. IEICE Trans. Electron., 98-C (12): 1058-1059 (2015)Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter., , and . IEICE Trans. Electron., 94-C (10): 1557-1564 (2011)A Demultiplexer Immune from Fabrication-Error Impairments as an Enabler of Compact High-Channel-Count (> 64 ch) Dense WDM Systems on Low-End Si PIC Platforms., , , , , and . OECC/PSC, page 1-3. IEEE, (2019)