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Comparison of TID response in core, input/output and high voltage transistors for flash memory.

Z. Liu, Z. Hu, Z. Zhang, H. Shao, M. Chen, D. Bi, B. Ning, and S. Zou. Microelectron. Reliab., 51 (6): 1148-1151 (2011)

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Zhang Zhang

Meng Zhang

Methods and implementations of road-network matchingM. Zhang. TU München, (2009)

Ning Zhang

Gang Zhang

Le Zhang

Other publications of authors with the same name

Improved Modular Convolution Neural Network for Human Pose Estimation.Z. Zhang, J. Dong, D. Zhou, X. Fang, and X. Wei. Edutainment, volume 11462 of Lecture Notes in Computer Science, page 378-388. Springer, (2018)Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment.H. Huang, D. Bi, and Z. Zhang. Microelectron. J., 45 (6): 759-766 (2014)Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.B. Ning, D. Bi, H. Huang, Z. Zhang, Z. Hu, M. Chen, and S. Zou. Microelectron. Reliab., 53 (2): 259-264 (2013)Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.C. Peng, Z. Hu, Z. Zhang, H. Huang, B. Ning, and D. Bi. Microelectron. Reliab., 54 (4): 730-737 (2014)A novel self-recoverable and triple nodes upset resilience DICE latch.D. Lin, Y. Xu, X. Li, X. Xie, J. Jiang, J. Ren, H. Zhu, Z. Zhang, and S. Zou. IEICE Electron. Express, 15 (19): 20180753 (2018)Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.B. Ning, D. Bi, H. Huang, Z. Zhang, M. Chen, and S. Zou. Microelectron. J., 44 (2): 86-93 (2013)Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation.H. Huang, Y. Huang, J. Zheng, S. Wei, K. Tang, D. Bi, and Z. Zhang. Microelectron. Reliab., (2016)Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.B. Ning, Z. Zhang, Z. Liu, Z. Hu, M. Chen, D. Bi, and S. Zou. Microelectron. Reliab., 52 (1): 130-136 (2012)Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs.C. Peng, Y. En, Z. Zhang, Y. Liu, and Z. Lei. Microelectron. Reliab., (2017)Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.S. Fan, B. Ning, Z. Hu, Z. Zhang, D. Bi, C. Peng, L. Song, and L. Dai. Microelectron. Reliab., (2016)

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Disambiguation of "Zhang, Zhengxuan"

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Comparison of TID response in core, input/output and high voltage transistors for flash memory.

Please choose a person to relate this publication to

Zhang Zhang

Meng Zhang

Ning Zhang

Gang Zhang

Le Zhang

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zhang, Zhengxuan"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Comparison of TID response in core, input/output and high voltage transistors for flash memory.

Please choose a person to relate this publication to

Zhang Zhang

Meng Zhang

Ning Zhang

Gang Zhang

Le Zhang

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
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Comparison of TID response in core, input/output and high voltage transistors for flash memory.