( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions.

, , , , , , и . IOLTS, стр. 146-151. IEEE Computer Society, (2007)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Angelo Geissen

Angelo Jotzoff

Angelo Jotzoff

Angelo Schmandra

Angelo Brayner

 

Другие публикации лиц с тем же именем

Reviewing the Evolution of the NAND Flash Technology., , , , , и . Proc. IEEE, 105 (9): 1609-1633 (2017)Erratic Effects of Irradiation in Floating Gate Memory Cells., , , и . IOLTS, стр. 51-56. IEEE Computer Society, (2006)Soft Errors induced by single heavy ions in Floating Gate memory arrays., , , и . DFT, стр. 275-284. IEEE Computer Society, (2005)40-mm2 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory., , , , , , , , , и 9 other автор(ы). IEEE J. Solid State Circuits, 35 (11): 1655-1667 (2000)Introduction to flash memory., , , и . Proc. IEEE, 91 (4): 489-502 (2003)Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology., , , , , , , , , и . ICICDT, стр. 37-40. IEEE, (2013)Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background pattern., , , , , , и . ESSDERC, стр. 54-57. IEEE, (2014)Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions., , , , , , и . IOLTS, стр. 146-151. IEEE Computer Society, (2007)Impact of total dose on heavy-ion upsets in floating gate arrays., , , , , и . Microelectron. Reliab., 50 (9-11): 1837-1841 (2010)