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New insights on the PBTI phenomena in SiON pMOSFETs., , , , , , and . Microelectron. Reliab., 52 (9-10): 1891-1894 (2012)A new method for the analysis of high-resolution SILC data., , , , , , , , , and . Microelectron. Reliab., 43 (9-11): 1483-1488 (2003)Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors., , , and . Microelectron. Reliab., 47 (9-11): 1416-1418 (2007)New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure., , , and . Microelectron. Reliab., 48 (8-9): 1509-1512 (2008)Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devices., , , and . Microelectron. Reliab., 47 (9-11): 1512-1516 (2007)High-resolution SILC measurements of thin SiO2 at ultra low voltages., , , , , , , , , and . Microelectron. Reliab., 42 (9-11): 1485-1489 (2002)Evidence for source side injection hot carrier effects on lateral DMOS transistors., , , , , , , and . Microelectron. Reliab., 44 (9-11): 1621-1624 (2004)28nm Data Memory with Embedded RRAM Technology in Automotive Microcontrollers., , , , , and . IMW, page 1-4. IEEE, (2023)Reduction of test effort. Looking for more acceleration for reliable components for automotive applications., , , and . Microelectron. Reliab., 48 (8-9): 1490-1493 (2008)NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique., , , and . Microelectron. Reliab., 48 (8-9): 1310-1312 (2008)