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Analysis of an ESD failure mechanism on a SiC MESFET., , , , , and . Microelectron. Reliab., 54 (9-10): 2217-2221 (2014)Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs., , , , , and . MIXDES, page 105-109. IEEE, (2022)An improved junction termination design using deep trenches for superjunction power devices., , , , and . MIXDES, page 547-551. IEEE, (2015)Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs., , , , , , , and . MIXDES, page 181-184. IEEE, (2020)Switching performance of 65 V vertical N-channel FLYMOSFETs., , , , , , , and . Microelectron. J., 39 (6): 914-921 (2008)Analysis in commutation of a new high voltage thyristor structure for high temperature., , and . MIXDES, page 426-430. IEEE, (2013)Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes., , , , , , , , , and 5 other author(s). Microelectron. J., (2022)Failure analysis of ESD-stressed SiC MESFET., , , , , and . Microelectron. Reliab., 55 (9-10): 1542-1548 (2015)