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Disambiguation of "Morancho, Frédéric"

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Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.

, , , , , , , , , , , , , , and . Microelectron. J., (2022)

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Frédéric Ruckert

Frédéric Roux

Frédéric Robin

Frédéric Leroux

Frédéric Ziebarth

 

Other publications of authors with the same name

Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs., , , , , , , and . MIXDES, page 181-184. IEEE, (2020)Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes., , , , , , , , , and 5 other author(s). Microelectron. J., (2022)Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs., , , , , and . MIXDES, page 105-109. IEEE, (2022)Switching performance of 65 V vertical N-channel FLYMOSFETs., , , , , , , and . Microelectron. J., 39 (6): 914-921 (2008)Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors., , , , , and . Microelectron. Reliab., 52 (3): 503-508 (2012)A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance., , , and . Microelectron. Reliab., (2018)A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions., , and . ICM, page 1-4. IEEE, (2017)An improved junction termination design using deep trenches for superjunction power devices., , , , and . MIXDES, page 547-551. IEEE, (2015)Characterisation of P floating islands for 150-200 V FLYMOSFETs., , , , , , and . IET Circuits Devices Syst., 1 (5): 333-340 (2007)