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Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 47 (9-11): 1639-1642 (2007)ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 54 (6-7): 1143-1149 (2014)A Wireless Personal Sensor Node for Real Time Dosimetry of Interventional Radiology Operators., , , , , , , , and . ApplePies, volume 409 of Lecture Notes in Electrical Engineering, page 1-7. Springer, (2015)Gate-lag effects in AlGaAs/GaAs power HFET's., , , and . Microelectron. Reliab., 41 (9-10): 1585-1589 (2001)Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations., , , , , , , and . Microelectron. Reliab., 50 (9-11): 1520-1522 (2010)Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs., , , , , and . IRPS, page 1-5. IEEE, (2021)Breakdown investigation in GaN-based MIS-HEMT devices., , , , , , , , , and 2 other author(s). ESSDERC, page 377-380. IEEE, (2014)Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs., , , , , , , and . IRPS, page 1-5. IEEE, (2020)DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues., , , , and . Microelectron. Reliab., 45 (9-11): 1585-1592 (2005)Characterization of a premixed flat combustor through plasma current measurements., , and . I2MTC, page 1-5. IEEE, (2020)