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Breakdown investigation in GaN-based MIS-HEMT devices.

F. Marino, D. Bisi, M. Meneghini, G. Verzellesi, E. Zanoni, M. Hove, S. You, S. Decoutere, D. Marcon, S. Stoffels, N. Ronchi, and G. Meneghesso. ESSDERC, page 377-380. IEEE, (2014)

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Werner Bisinger

Reinhold Bisinger

Peter Bisinger

Hans-Joachim Bisinger

Eustache Bisimis

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Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs.I. Rossetto, M. Meneghini, D. Bisi, A. Barbato, M. Hove, D. Marcon, T. Wu, S. Decoutere, G. Meneghesso, and E. Zanoni. Microelectron. Reliab., 55 (9-10): 1692-1696 (2015)Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors.D. Bisi, M. Meneghini, A. Stocco, G. Cibin, A. Pantellini, A. Nanni, C. Lanzieri, E. Zanoni, and G. Meneghesso. ESSDERC, page 61-64. IEEE, (2013)Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.M. Meneghini, R. Silvestri, S. Dalcanale, D. Bisi, E. Zanoni, G. Meneghesso, P. Vanmeerbeek, A. Banerjee, and P. Moens. IRPS, page 2. IEEE, (2015)Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.D. Bisi, A. Stocco, M. Meneghini, F. Rampazzo, A. Cester, G. Meneghesso, and E. Zanoni. ESSDERC, page 389-392. IEEE, (2014)Proton induced trapping effect on space compatible GaN HEMTs.A. Stocco, S. Gerardin, D. Bisi, S. Dalcanale, F. Rampazzo, M. Meneghini, G. Meneghesso, J. Grünenpütt, B. Lambert, H. Blanck and 1 other author(s). Microelectron. Reliab., 54 (9-10): 2213-2216 (2014)Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.G. Meneghesso, M. Meneghini, D. Bisi, I. Rossetto, T. Wu, M. Hove, D. Marcon, S. Stoffels, S. Decoutere, and E. Zanoni. Microelectron. Reliab., (2016)Field plate related reliability improvements in GaN-on-Si HEMTs.A. Chini, F. Soci, F. Fantini, A. Nanni, A. Pantellini, C. Lanzieri, D. Bisi, G. Meneghesso, and E. Zanoni. Microelectron. Reliab., 52 (9-10): 2153-2158 (2012)Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.D. Bisi, A. Stocco, I. Rossetto, M. Meneghini, F. Rampazzo, A. Chini, F. Soci, A. Pantellini, C. Lanzieri, P. Gamarra and 7 other author(s). Microelectron. Reliab., 55 (9-10): 1662-1666 (2015)Short-Circuit Capability with GaN HEMTs : Invited.D. Bisi, B. Cruse, P. Zuk, P. Parikh, U. Mishra, T. Hosoda, M. Kamiyama, and M. Kanamura. IRPS, page 1-7. IEEE, (2022)Breakdown investigation in GaN-based MIS-HEMT devices.F. Marino, D. Bisi, M. Meneghini, G. Verzellesi, E. Zanoni, M. Hove, S. You, S. Decoutere, D. Marcon, S. Stoffels and 2 other author(s). ESSDERC, page 377-380. IEEE, (2014)

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Disambiguation of "Bisi, Davide"

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Breakdown investigation in GaN-based MIS-HEMT devices.

Please choose a person to relate this publication to

Werner Bisinger

Reinhold Bisinger

Peter Bisinger

Hans-Joachim Bisinger

Eustache Bisimis

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Bisi, Davide"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Breakdown investigation in GaN-based MIS-HEMT devices.

Please choose a person to relate this publication to

Werner Bisinger

Reinhold Bisinger

Peter Bisinger

Hans-Joachim Bisinger

Eustache Bisimis

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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Breakdown investigation in GaN-based MIS-HEMT devices.