Author of the publication

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor.

, , , , , and . Microelectron. Reliab., 45 (5-6): 819-822 (2005)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Quantitative oxide charge determination by photocurrent analysis., , and . Microelectron. Reliab., 47 (4-5): 673-677 (2007)Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors., , , , , and . Microelectron. Reliab., 43 (8): 1253-1257 (2003)Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient., , and . Microelectron. Reliab., 41 (7): 1089-1092 (2001)Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors., , and . Microelectron. Reliab., 47 (4-5): 635-639 (2007)Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices., , , and . Microelectron. Reliab., 41 (7): 1085-1088 (2001)Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers., , and . Microelectron. Reliab., 47 (12): 2094-2099 (2007)Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor., , , , , and . Microelectron. Reliab., 45 (5-6): 819-822 (2005)Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films., , and . Microelectron. Reliab., 45 (7-8): 1124-1133 (2005)Investigation of the reliability of 4H-SiC MOS devices for high temperature applications., , , , , , , and . Microelectron. Reliab., 51 (8): 1346-1350 (2011)Electrical reliability aspects of through the gate implanted MOS structures with thin oxides., , , , and . Microelectron. Reliab., 41 (7): 987-990 (2001)