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Random Telegraph Signal noise properties of HfOx RRAM in high resistive state., , , , and . ESSDERC, page 274-277. IEEE, (2012)Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation., , , , , and . IRPS, page 4. IEEE, (2022)A multiscale modeling approach for the simulation of OxRRAM devices., , , and . NVMTS, page 1-8. IEEE, (2017)Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects., , , , , and . IRPS, page 1-6. IEEE, (2019)Fundamental reliability issues of advanced charge-trapping Flash memory devices., and . ICECS, page 1009-1012. IEEE, (2010)Towards a Universal Model of Dielectric Breakdown., , , , , and . IRPS, page 1-8. IEEE, (2023)Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS., , , and . ESSDERC, page 246-249. IEEE, (2014)High-kappa related reliability issues in advanced non-volatile memories., and . Microelectron. Reliab., 50 (9-11): 1251-1258 (2010)Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM., , , , , and . IEEE Des. Test, 34 (3): 23-30 (2017)Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents., , , , , , , and . IMW, page 1-4. IEEE, (2022)