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A Cryogenic CMOS Current Integrator and Correlation Double Sampling Circuit for Spin Qubit Readout.

, , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 70 (12): 5220-5228 (December 2023)

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Shadow and Specular Removal by Photometric Linearization based on PCA with Outlier Exclusion., , and . VISAPP (1), page 221-229. SciTePress, (2012)Determining the low-frequency noise source in cryogenic operation of short-channel bulk MOSFETs., , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation., , , , , and . VLSI Technology and Circuits, page 334-335. IEEE, (2022)Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance., , , , , , , , , and 1 other author(s). ESSDERC, page 182-185. IEEE, (2014)PBTI for N-type tunnel FinFETs., , , , , , , , , and 4 other author(s). ICICDT, page 1-4. IEEE, (2015)Development of constant torque device and its application to power assist systems., , , and . AIM, page 192-197. IEEE, (2014)Control moment gyroscope for swing motion control., , , and . ROBIO, page 650-655. IEEE, (2015)Photometric Linearization by Robust PCA for Shadow and Specular Removal., , , and . VISIGRAPP (Selected Papers), volume 359 of Communications in Computer and Information Science, page 211-224. Springer, (2012)Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes., , , , , , , , , and 5 other author(s). ESSDERC, page 202-205. IEEE, (2013)Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration., , , , , , , , , and 1 other author(s). ESSDERC, page 278-281. IEEE, (2014)