( en | de | ru )

 

Disambiguation of "Zhao, Qing-Tai"

Author of the publication

copydeleteadd this publication to your clipboard
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation.

, , , , , , , , and . ESSDERC, page 456-459. IEEE, (2016)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Qing Zhao

Zhao Zhao

Qing Shengzu

Lan Qing

Li Qing

 

Other publications of authors with the same name

NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future., , , , , , , , , and 23 other author(s). DATE, page 957-962. IEEE, (2022)Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM., , , , , , , and . ESSDERC, page 42-45. IEEE, (2017)Comparison between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors., , , , and . MIXDES, page 31-36. IEEE, (2023)Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor., , , , , , and . ESSDERC, page 268-271. IEEE, (2017)High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain., , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)GeSn Vertical Gate-all-around Nanowire n-type MOSFETs., , , , , , , , and . ESSDERC, page 364-367. IEEE, (2022)4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses., , , , and . ESSDERC, page 291-294. IEEE, (2021)Ferroelectric Schottky Barrier MOSFET as Analog Synapses for Neuromorphic Computing., , , , , , and . ESSCIRC, page 121-124. IEEE, (2022)Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs., , , , , , , , , and 2 other author(s). ESSDERC, page 256-259. IEEE, (2013)Experimental demonstration of improved analog device performance in GAA-NW-TFETs., , , , , and . ESSDERC, page 178-181. IEEE, (2014)