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Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?

, , , , , , , , , и . IMW, стр. 1-4. IEEE, (2023)

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Frank Lehninger

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Erich David

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Baruch Davidoff

 

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BEoL integrated hafnium zirconium oxide varactors for tunable mmWave applications., , , , , и . ESSDERC, стр. 253-256. IEEE, (2022)Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress., , , , , и . IMW, стр. 1-4. IEEE, (2023)Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors., , , , , , , , , и . IRPS, стр. 1-5. IEEE, (2024)Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions., , , , , , , , , и 5 other автор(ы). IRPS, стр. 11-1. IEEE, (2022)Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz., , , , , и . DRC, стр. 1-2. IEEE, (2023)Improved Tunability of BEoL-integrated Hafnium Zirconium Oxide Varactors for mmWave Applications., , , , , и . DRC, стр. 1-2. IEEE, (2024)Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?, , , , , , , , , и . IMW, стр. 1-4. IEEE, (2023)Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology., , , , , , , , , и 6 other автор(ы). IMW, стр. 1-4. IEEE, (2022)Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer., , , , , , , , , и 6 other автор(ы). VLSI Technology and Circuits, стр. 355-356. IEEE, (2022)Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells., , , , , , , , , и 9 other автор(ы). IRPS, стр. 1-9. IEEE, (2020)