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Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?

, , , , , , , , , и . IMW, стр. 1-4. IEEE, (2023)

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Thomas Raffel

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Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?, , , , , , , , , и . IMW, стр. 1-4. IEEE, (2023)Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications., , , , , , , , и . ESSDERC, стр. 113-116. IEEE, (2023)Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-4. IEEE, (2021)Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions., , , , , , , , , и 4 other автор(ы). IMW, стр. 1-4. IEEE, (2024)Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications., , , , , , , , , и 3 other автор(ы). ICICDT, стр. 8-11. IEEE, (2022)Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions., , , , , , , , , и 5 other автор(ы). IRPS, стр. 11-1. IEEE, (2022)Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications., , , , , и . ISOCC, стр. 167-168. IEEE, (2022)Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination., , , , , , , , , и 4 other автор(ы). IMW, стр. 1-4. IEEE, (2022)FeFET based LIF Neuron with Learnable Threshold and Time Constant., , , , , , , и . DRC, стр. 1-2. IEEE, (2024)