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Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications.

, , , , , and . ISOCC, page 167-168. IEEE, (2022)

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Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions., , , , , , , , , and 5 other author(s). IRPS, page 11-1. IEEE, (2022)Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications., , , , , , , , , and 3 other author(s). ICICDT, page 8-11. IEEE, (2022)Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator., , , , , , , , , and 8 other author(s). Adv. Intell. Syst., (June 2023)Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?, , , , , , , , , and . IMW, page 1-4. IEEE, (2023)Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications., , , , , , , , and . ESSDERC, page 113-116. IEEE, (2023)Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility., , , , , , , , , and 1 other author(s). Adv. Intell. Syst., (April 2024)Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices., , , , , , , , , and 3 other author(s). IRPS, page 1-4. IEEE, (2021)Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions., , , , , , , , , and 4 other author(s). IMW, page 1-4. IEEE, (2024)Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications., , , , , and . ISOCC, page 167-168. IEEE, (2022)Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination., , , , , , , , , and 4 other author(s). IMW, page 1-4. IEEE, (2022)