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Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS.

, , , and . Microelectron. J., 37 (1): 31-37 (2006)

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An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices., , , , and . Microelectron. Reliab., 52 (3): 519-524 (2012)Evaluation of graded-channel SOI MOSFET operation at high temperatures., , and . Microelectron. J., 37 (7): 601-607 (2006)Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices., , , , , and . Microelectron. J., (2021)Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation., , , , , and . Microelectron. Reliab., 54 (11): 2349-2354 (2014)The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs., , , and . Microelectron. J., 37 (9): 952-957 (2006)Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications., , , and . Microelectron. J., 37 (2): 137-144 (2006)Analog Circuit Design Using Graded-Channel SOI NMOSFETS., , and . SBCCI, page 130-135. IEEE Computer Society, (2001)Design of Operational Transconductance Amplifiers with Improved Gain by Using Graded-Channel SOI nMOSFETs., , , , and . SBCCI, page 26-. IEEE Computer Society, (2003)Performance evaluation of Tunnel-FET basic amplifier circuits., , and . LASCAS, page 21-24. IEEE, (2019)Tradeoff between the transistor reconfigurable technology and the zero-temperature-coefficient (ZTC) bias point on BESOI MOSFET., , , and . Microelectron. J., (2019)