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Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , and . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Single- and double-heterostructure GaN-HEMTs devices for power switching applications., , , , , , , , , and . Microelectron. Reliab., 52 (9-10): 2426-2430 (2012)Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 47 (9-11): 1639-1642 (2007)Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 54 (9-10): 2248-2252 (2014)Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs., , , , , , , , , and 7 other author(s). Microelectron. Reliab., 55 (9-10): 1662-1666 (2015)Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier., , , , , , , , , and 8 other author(s). IRPS, page 51-1. IEEE, (2022)Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling., , , , , , , , , and 1 other author(s). IRPS, page 1-10. IEEE, (2020)Proton induced trapping effect on space compatible GaN HEMTs., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 54 (9-10): 2213-2216 (2014)Hot carrier aging degradation phenomena in GaN based MESFETs., , , , , , , and . Microelectron. Reliab., 44 (9-11): 1375-1380 (2004)Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate., , , , , and . IEICE Electron. Express, 3 (13): 310-315 (2006)