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Disambiguation of "Meneghesso, Gaudenzio"

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GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.

, , , , , , , , , , , and . IRPS, page 11. IEEE, (2022)

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Other publications of authors with the same name

Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism., , , , , and . Microelectron. Reliab., 50 (9-11): 1599-1603 (2010)Full Optical Contactless Thermometry Based on LED Photoluminescence., , , , , , , and . IEEE Trans. Instrum. Meas., (2021)Effects of constant voltage stress on organic complementary logic inverters., , , , , , , and . ESSDERC, page 298-301. IEEE, (2014)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Reliability Investigation of GaN HEMTs for MMICs Applications., , , , and . Micromachines, 5 (3): 570-582 (2014)Stress-induced instabilities of shunt paths in high efficiency MWT solar cells., , , , , , , , , and . IRPS, page 3. IEEE, (2015)Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors., , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits., , , , , and . Microelectron. Reliab., 52 (9-10): 2093-2097 (2012)Single- and double-heterostructure GaN-HEMTs devices for power switching applications., , , , , , , , , and . Microelectron. Reliab., 52 (9-10): 2426-2430 (2012)Degradation of GaN-on-GaN vertical diodes submitted to high current stress., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2018)