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Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

, , , , , , , and . Microelectron. Reliab., (2018)

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New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology., , , , , , , , , and 3 other author(s). IRPS, page 3-1. IEEE, (2018)Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks., , , , , , , and . ESSCIRC, page 55-58. IEEE, (2021)Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits., , , , , , , and . Microelectron. Reliab., (2018)Deep H-GCN: Fast Analog IC Aging-Induced Degradation Estimation., , , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 41 (7): 1990-2003 (2022)Analog IC Aging-induced Degradation Estimation via Heterogeneous Graph Convolutional Networks., , , , , and . ASP-DAC, page 898-903. ACM, (2021)HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors., , , , , , , , and . Microelectron. Reliab., 51 (9-11): 1515-1520 (2011)Systematical study of 14nm FinFET reliability: From device level stress to product HTOL., , , , , , , , , and 3 other author(s). IRPS, page 2. IEEE, (2015)