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A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model.

S. Shen, P. Cao, M. Ling, and L. Shi. CoRR, (2022)

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Lei Shi

Huili Shi

Zhanjun Shi

Jian Shi

Renhu Shi

Other publications of authors with the same name

Study of the power capability of LDMOS and the improved methods.Z. Sun, W. Sun, Y. Yi, and L. Shi. Microelectron. Reliab., 46 (5-6): 1001-1005 (2006)A review of safe operation area.Z. Sun, W. Sun, and L. Shi. Microelectron. J., 37 (7): 661-667 (2006)EERA-KWS: A 163 TOPS/W Always-on Keyword Spotting Accelerator in 28nm CMOS Using Binary Weight Network and Precision Self-Adaptive Approximate Computing.B. Liu, Z. Wang, H. Fan, J. Yang, B. Liu, W. Zhu, L. Huang, Y. Gong, W. Ge, and L. Shi. IEEE Access, (2019)An energy-efficient voice activity detector using deep neural networks and approximate computing.B. Liu, Z. Wang, S. Guo, H. Yu, Y. Gong, J. Yang, and L. Shi. Microelectron. J., (2019)Handling Deafness Problem of Scheduled Multi-Channel Polling MACs.F. Jiang, H. Liu, and L. Shi. IEICE Trans. Commun., 95-B (7): 2323-2329 (2012)A Data Prefetch and Reuse Strategy for Coarse-Grained Reconfigurable Architectures.W. Ge, Z. Qi, Y. Du, L. Ma, and L. Shi. IEICE Trans. Inf. Syst., 96-D (3): 616-623 (2013)Bulk-silicon power integrated circuit technology for 192-channel data driver ICs of plasma display panel.W. Sun, H. Li, Y. Yi, H. Wu, and L. Shi. IET Circuits Devices Syst., 2 (2): 277-280 (2008)Low power design for SoC with power management unit.D. Sun, S. Xu, W. Sun, S. Lu, and L. Shi. ASICON, page 719-722. IEEE, (2011)A 65nm 10MHz single-inductor dual-output switching buck converter with time-multiplexing control.M. Yang, W. Sun, S. Xu, S. Lu, and L. Shi. ASICON, page 870-873. IEEE, (2011)A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications.Y. Tan, M. Kumar, J. Sin, L. Shi, and J. Lau. IEEE J. Solid State Circuits, 35 (10): 1481-1486 (2000)

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Disambiguation of "Shi, Longxing"

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A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model.

Please choose a person to relate this publication to

Lei Shi

Huili Shi

Zhanjun Shi

Jian Shi

Renhu Shi

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Shi, Longxing"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model.

Please choose a person to relate this publication to

Lei Shi

Huili Shi

Zhanjun Shi

Jian Shi

Renhu Shi

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model.