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s Write Throughput at Tj of 170°C.

Y. Taito, T. Kono, M. Nakano, T. Saito, T. Ito, K. Noguchi, H. Hidaka, and T. Yamauchi. IEEE J. Solid State Circuits, 51 (1): 213-221 (2016)

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Yasuhiko Sakuma

Yasuhiko Suzuki

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15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs.T. Ogawa, K. Matsubara, Y. Taito, T. Saito, M. Izuna, K. Takeda, Y. Kaneda, T. Shimoi, H. Mitani, T. Ito and 1 other author(s). ISSCC, page 290-292. IEEE, (2024)A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C.T. Shimoi, K. Matsubara, T. Saito, T. Ogawa, Y. Taito, Y. Kaneda, M. Izuna, K. Takeda, H. Mitani, T. Ito and 1 other author(s). IEEE J. Solid State Circuits, 59 (4): 1283-1292 (April 2024)7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°C.Y. Taito, M. Nakano, H. Okimoto, D. Okada, T. Ito, T. Kono, K. Noguchi, H. Hidaka, and T. Yamauchi. ISSCC, page 1-3. IEEE, (2015)7.6 A 90nm embedded 1T-MONOS flash macro for automotive applications with 0.07mJ/8kB rewrite energy and endurance over 100M cycles under Tj of 175°C.H. Mitani, K. Matsubara, H. Yoshida, T. Hashimoto, H. Yamakoshi, S. Abe, T. Kono, Y. Taito, T. Ito, T. Krafuji and 3 other author(s). ISSCC, page 140-141. IEEE, (2016)Introduction to the Special Section on the 2021 IEEE International Solid-State Circuits Conference (ISSCC).A. Amirkhany, T. Karnik, S. Das, J. Deguchi, and Y. Taito. IEEE J. Solid State Circuits, 57 (1): 3-5 (2022)An embedded DRAM with a 143-MHz SRAM interface using a sense-synchronized read/write.Y. Taito, T. Tanizaki, M. Kinoshita, F. Igaue, T. Fujino, and K. Arimoto. IEEE J. Solid State Circuits, 38 (11): 1967-1973 (2003)A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C.T. Shimoi, K. Matsubara, T. Saito, T. Ogawa, Y. Taito, Y. Kaneda, M. Izuna, K. Takeda, H. Mitani, T. Ito and 1 other author(s). VLSI Technology and Circuits, page 134-135. IEEE, (2022)A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170°C.Y. Taito, T. Kono, M. Nakano, T. Saito, T. Ito, K. Noguchi, H. Hidaka, and T. Yamauchi. IEEE J. Solid State Circuits, 51 (1): 213-221 (2016)SONOS Split-Gate eFlash Memory.T. Ito, and Y. Taito. Embedded Flash Memory for Embedded Systems, Springer, (2018)A 24MB Embedded Flash System Based on 28nm SG-MONOS Featuring 240MHz Read Operations and Robust Over-The-Air Software Update for Automotive.A. Kanda, T. Kurafuji, K. Takeda, T. Ogawa, Y. Taito, K. Yoshihara, M. Nakano, T. Ito, H. Kondo, and T. Kono. VLSI Circuits, page 210-. IEEE, (2019)

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Disambiguation of "Taito, Yasuhiko"

Please choose a person to relate this publication to

Yasuhiko Sakuma

Yasuhiko Sakuma

Yasuhiko Suzuki

Other publications of authors with the same name

Disambiguation