Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs., , , , and . ESSCIRC, page 48-57. IEEE, (2007)TCAD investigation on hot-electron injection in new-generation technologies., , , , , , , , , and . Microelectron. Reliab., (2018)Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide., , , , , , , and . Microelectron. Reliab., (2017)A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter., , , and . ESSDERC, page 392-395. IEEE, (2022)TCAD predictions of hot-electron injection in p-type LDMOS transistors., , , , , , , , , and 1 other author(s). ESSDERC, page 86-89. IEEE, (2019)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias., , , , and . IEEE J. Solid State Circuits, 44 (7): 1959-1967 (2009)The effects of scaling on the performance of small-signal MOS amplifiers: a physics-based simulation study.. ISCAS, page 733-736. IEEE, (2000)Characterization and Modeling of BTI in SiC MOSFETs., , , , , , , , and . ESSDERC, page 82-85. IEEE, (2019)Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors., , , , , and . IRPS, page 1-5. IEEE, (2020)