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Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide., , , , , , , and . Microelectron. Reliab., (2017)A numerical method to compute isotropic band models from anisotropic semiconductor band structures., , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 12 (9): 1327-1336 (1993)Two-Dimensional Numerical Analysis of Latchup in a VLSI CMOS Technology., , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 4 (4): 561-574 (1985)TCAD predictions of hot-electron injection in p-type LDMOS transistors., , , , , , , , , and 1 other author(s). ESSDERC, page 86-89. IEEE, (2019)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Optimum Design Rules for CMOS Hall Sensors., , , , and . Sensors, 17 (4): 765 (2017)Latch-up in CMOS circuits: A review.. Eur. Trans. Telecommun., 1 (3): 337-349 (1990)MOS2: an efficient MOnte Carlo Simulator for MOS devices., , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 7 (2): 259-271 (1988)The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs., , , , and . ESSCIRC, page 48-57. IEEE, (2007)Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's., , , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 10 (10): 1276-1286 (1991)