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Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit., , , , , , and . ESSDERC, page 146-149. IEEE, (2018)Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon., , , , , , , , , and . IRPS, page 9. IEEE, (2022)The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release., , , , , and . IRPS, page 1-6. IEEE, (2020)Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks., , , , , , , , , and . IRPS, page 12-1. IEEE, (2022)Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown., , , , , , , , , and 1 other author(s). IRPS, page 5-1. IEEE, (2018)Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2019)Accelerated Device Degradation of High-Speed Ge Waveguide Photodetectors., , , , and . IRPS, page 1-7. IEEE, (2019)STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application., , , , , , , , , and 6 other author(s). IMW, page 1-4. IEEE, (2021)Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution., , , , , , , , , and 3 other author(s). IRPS, page 1-5. IEEE, (2021)Understanding and empirical fitting the breakdown of MgO in end-of-line annealed MTJs., , , , , and . IRPS, page 1-5. IEEE, (2020)