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Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies.

, , , , and . CICC, page 1-4. IEEE, (2013)

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NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures., , , , , , , , , and . IRPS, page 2. IEEE, (2015)ESD protection diodes in optical interposer technology., , , , , , and . ICICDT, page 1-4. IEEE, (2015)Physics-based device aging modelling framework for accurate circuit reliability assessment., , , , , , , , , and . IRPS, page 1-6. IEEE, (2021)Understanding the memory window in 1T-FeFET memories: a depolarization field perspective., , , , , , , and . IMW, page 1-4. IEEE, (2021)Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps., , , , , , and . IRPS, page 5. IEEE, (2018)The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation., , , , , and . IRPS, page 1-7. IEEE, (2020)Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology., , , , , , , , , and . ISQED, page 473-479. IEEE, (2014)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , and . IRPS, page 6. IEEE, (2022)Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , and . IRPS, page 1-10. IEEE, (2023)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)