( en | de | ru )

 

Disambiguation of "Hamzaoglu, Fatih"

Author of the publication

copydeleteadd this publication to your clipboard
A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation.

, , , , , , , and . ISSCC, page 346-347. IEEE, (2010)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Abdelhak Fatihi

Fatih Bayazit

Fatih Ceteci

Fatih Koyuncu

Fatih Bilgili

 

Other publications of authors with the same name

Circuit-level techniques to control gate leakage for sub-100nm CMOS., and . ISLPED, page 60-63. ACM, (2002)A 3-GHz 70-mb SRAM in 65-nm CMOS technology with integrated column-based dynamic power supply., , , , , , , , and . IEEE J. Solid State Circuits, 41 (1): 146-151 (2006)Multi-Phase 1 GHz Voltage Doubler Charge Pump in 32 nm Logic Process., , , , , , and . IEEE J. Solid State Circuits, 45 (4): 751-758 (2010)A 4.2GHz 0.3mm2 256kb Dual-Vcc SRAM Building Block in 65nm CMOS., , , , , , , , , and 3 other author(s). ISSCC, page 2572-2581. IEEE, (2006)A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management., , , , , , , , and . ISSCC, page 456-457. IEEE, (2009)A 1 Gb 2 GHz 128 GB/s Bandwidth Embedded DRAM in 22 nm Tri-Gate CMOS Technology., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 50 (1): 150-157 (2015)An offset-cancelling four-phase voltage sense amplifier for resistive memories in 14nm CMOS., , , and . CICC, page 1-4. IEEE, (2017)Analysis of dual-VT SRAM cells with full-swing single-ended bit line sensing for on-chip cache., , , , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 10 (2): 91-95 (2002)A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation., , , , , , , and . ISSCC, page 346-347. IEEE, (2010)A 153Mb-SRAM Design with Dynamic Stability Enhancement and Leakage Reduction in 45nm High-Κ Metal-Gate CMOS Technology., , , , , , , , , and . ISSCC, page 376-377. IEEE, (2008)